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| BAT54SLT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features http://onsemi.com * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 V (Typ) @ IF = 10 mAdc * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 VOLT DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 ANODE 2 CATHODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Forward Current (DC) Non-Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature Storage Temperature Range Symbol VR PF Value 30 225 1.8 200 Max 600 300 Unit V mW mW/C mA mA mA 1 2 3 CATHODE/ANODE MARKING DIAGRAM 3 IF IFSM IFRM SOT-23 CASE 318 STYLE 11 1 LD3M G G TJ Tstg -55 to 150 -55 to +150 C C LD3 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device BAT54SLT1G Package SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 August, 2010 - Rev. 13 1 Publication Order Number: BAT54SLT1/D BAT54SLT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Symbol V(BR)R CT IR VF VF VF trr VF VF Min 30 - - - - - - - - Typ - 7.6 0.5 0.22 0.38 0.46 - 0.29 0.35 Max - 10 2.0 0.24 0.5 0.8 5.0 0.32 0.40 Unit V pF mAdc Vdc Vdc Vdc ns Vdc Vdc http://onsemi.com 2 BAT54SLT1G 820 W +10 V 2k 100 mH 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 mF tr 10% tp T IF trr T Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1 25C IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (mA) 85C 10 1 50C 1.0 25C 0.1 0.0 -40C 1000 100 10 1.0 TA = 150C TA = 125C TA = 85C 0.1 0.01 0.001 TA = 25C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 -55C 0.6 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 BAT54SLT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE q MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 BAT54SLT1/D |
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